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Si3458BDV
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
60
R DS(on) ( Ω )
0.100 at V GS = 10 V
0.128 at V GS = 4.5 V
I D (A) d
4.1
3.6
Q g (Typ.)
3.5 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Load Switch for Portable Applications
TSOP-6
Top View
? LED Backlight Switch
? DC/DC Converter
D
1
6
D
D
(1, 2, 5, 6)
3 mm D
2
5
D
Marking Code
G
3
4
S
A N
XXX
Lot Tracea b ility
G
and Date Code
(3)
2. 8 5 mm
Part # Code
(4)
Orderin g Information: Si345 8 BD V -T1-E3 (Lead (P b )-free)
Si345 8 BD V -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
60
± 20
4.1
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
3.2
3.2 a, b
2.5 a, b
10
2.9
1.7 a, b
3.3
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.1
2 a, b
W
T A = 70 °C
1.3 a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a, c
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
R thJA
R thJF
53
32
62.5
38
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 110 °C/W.
d. Based on T C = 25 °C.
Document Number: 69501
S09-0660-Rev. B, 20-Apr-09
www.vishay.com
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